Purdue University engineers have developed a way to make transistors process and store information as one device. For decades many researchers have tried to integrate ferroelectric material and silicon, however, there were always issues with the interface between the two.
A team led by Peide Ye, the Richard J. and Mary Jo Schwartz Professor of Electrical and Computer Engineering at Purdue, discovered how to overcome this issue. They used a material, alpha indium selenide, that not only has ferroelectric properties but also has a narrow band gap which makes it possible to act as a semiconductor without losing ferroelectric properties. Because of this, there are no interface issues.
This new development makes it possible for higher density and more energy-efficient chips. Which translates to more performance per watt. Looking forward, if the storage capacity gets to significant levels we may see computers that don’t have hard drives or RAM. All storage will be integrated into the processor. For more detailed information and to read the full article click here.